| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e642855e891440684662e390d5628f39 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-952
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
1998-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb4a7344db6b9630180d0077a24a3df5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dc65d6e313bfa9626858e0a1c2dfab4 |
| publicationDate |
2003-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1121713-A4 |
| titleOfInvention |
GAS IMMERSION LASER HEATING METHOD SUITABLE FOR PRODUCING INTEGRATED CIRCUITS OF REDUCED SIZE |
| abstract |
A method for fabricating a plurality of shallow-junction metal oxide semiconductor field effect transistors (MOSFETs) which are separated by substantially transparent isolation elements (102). This method includes the amorphization of a selected depth of silicon (200) in a silicon wafer. A top layer stack of a dielectric and a highly radiation absorbent material are deposited to protect areas of which amorphization is not desired. After the melted silicon has cooled and recrystallized, the top layer of highly absorbent material is removed. |
| priorityDate |
1998-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |