| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f481982f9992cbb527a6d31589832958 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3146 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate |
2000-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4974bf47291f8cea29fd39b6892fcc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2d0dc46ce06bfc7d7eba92ed82543fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0a6b1fc87608067a54b937d1091cb56 |
| publicationDate |
2002-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1107303-A3 |
| titleOfInvention |
Surface treatment anneal of silicon-oxy-carbide semiconductor surface layer |
| abstract |
A method of surface treating a semiconductor surfacenand semiconductor article is disclosed. A depositednsemiconductor surface layer is treated and annealed withinnan alkyl environment of a chemical vapor deposition chambernto passivate the semiconductor surface layer by bondingnwith the silicon and attaching alkyl terminating chemicalnspecies on the surface of the semiconductor surface layernto aid in dehydroxylating the surface. The semiconductornsurface layer comprises a polysilicon-oxy-carbide surfacenlayer having a carbon content ranging from about 5% tonabout 20% at the molecular level and a dielectric constantnof about 2.5 to about 3.0. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7749563-B2 |
| priorityDate |
1999-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |