| abstract |
A method and apparatus for reducing trapped charges in a semiconductor device having anfirst layer and a second layer, said method comprising the steps of providing said first layer,nflowing a deposition, a dilution and a conversion gas upon said first layer thereby forming a transitionnlayer, phasing out said flow of conversion gas and forming said second layer upon saidntransition layer. The deposition gas, dilution gas and conversion gas are preferably trimethylsilane,nhelium and N 2 O respectively. The method is performed via chemical vapor deposition ornplasma enhanced chemical vapor deposition. The apparatus has a first insulating layer, a transitionnlayer disposed upon said first layer and a second insulating layer disposed upon said transitionnlayer. The transition layer improves the adhesion between said first insulating layer and saidnsecond insulating layer. A reduction in the amount of electrical charges (i.e., ions, electrons ornthe like) trapped between layers of deposited material improves the integrity and quality of devicesnformed from such layers. |