| abstract |
The vertical bipolar transistor comprises an intrinsic collector (4) disposed on an extrinsic collector layer (2) buried in a semiconductor substrate, a lateral isolation region (5) surrounding the upper part of the intrinsic collector, a remote extrinsic collector well (60), a base (8) comprising a semiconductor region situated above the intrinsic collector and the lateral isolation region and comprising at least one layer of silicon, and a doped bipartite emitter (11), surrounded by the base , comprising a first part (110) formed of monocrystalline silicon and directly in contact with the upper surface of said semiconductor region in a predetermined window (800) of said upper surface located above the intrinsic collector, and a second part (111) formed of polycrystalline silicon, the two parts of the emitter being separated by an oxide separating layer (112) if killed at a distance from the emitter-base junction of the transistor. |