http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1100121-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d1d01f6fc6a8e81cf60813f0693f6cb8 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate | 2000-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0866ec955ae6d6049c3e659369b9877c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fd996d61ba0235a2fc0e2a2998efa90 |
| publicationDate | 2004-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1100121-A3 |
| titleOfInvention | Process for forming low K silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant |
| abstract | A process for forming low k silicon oxide dielectric material having a dielectric constant no greaternthan 3.0, while suppressing pressure spikes during the formation of the low k silicon oxidendielectric material comprises reacting an organo-silane and hydrogen peroxide in a reactor chamberncontaining a silicon substrate while maintaining an electrical bias on the substrate. In a preferrednembodiment the reactants are flowed into the reactor at a reactant flow ratio of organo-silanenreactant to hydrogen peroxide reactant of not more than 10.6 sccm of organo-silane reactant pern0.1 grams/minute of hydrogen peroxide reactant; and the substrate is biased with either a positivenDC bias potential, with respect to the grounded reactor chamber walls, of about +50 to +300 volts,nor a low frequency AC bias potential ranging from a minimum of +50/-50 volts up to a maximumnof about +300/-300 volts. |
| priorityDate | 1999-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.