http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1096321-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-167 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
| filingDate | 2000-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5c2ae25faa4cf85fb8704d816dae3ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6fd31aa47c2da18e32687c514a9da04 |
| publicationDate | 2001-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1096321-A1 |
| titleOfInvention | Light exposure method |
| abstract | A light exposure method for ultra-fine processing for a semiconductor in whichnlight transmittance of a resist layer in a wavelength range of the extreme ultravioletn(EUV) light is improved to enable ultra-fine processing more elaborate than is possiblenwith conventional methods. In selectively exposing a resist layer to X-rays, a highnmolecular materials obtained on replacing at least a portion of hydrogen atoms of anpre-existing resist material by a substituent containing an alkyl group and/or ansubstituent containing an aromatic ring is used as a high molecular material of thenresist layer. By replacing the hydrogen atoms of the high molecular materials with ansubstituent containing an alkyl group or a substituent containing an aromatic ring, thenproportion of oxygen atoms in an atom of the high molecular materials becomesnrelatively smaller to suppress optical absorption of the entire high molecular material. |
| priorityDate | 1999-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.