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filingDate 2000-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf624c2b00c5089e41db83797da687f1
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publicationDate 2001-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1091018-A1
titleOfInvention Purification, analysis and deposition of titanium amides
abstract The present invention is a process for enhancing the chemical vapor depositionnof titanium nitride from a titanium containing precursor selected from the group consistingnof tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof,nreacted with ammonia to produce the titanium nitride on a semiconductor substrate bynthe addition of organic amines, such as dipropylamine, in a range of approximately 10nparts per million by weight to 10% by weight, preferably 50 parts per million by weight ton1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts pernmillion by weight to the titanium containing precursor wherein prior to the reaction, saidntitanium containing precursor is subjected to a purification process to removenhydrocarbon impurities from the titanium containing precursor. It is shown that additionnof small amounts of organic amines enhance the deposition rate of titanium nitride, whilenthe presence of hydrocarbons, such as n-decane, retard the deposition rate of titaniumnnitride.
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