| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0120933550ea729b9f3186c3772531b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32308 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18311 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
1999-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94bb1babdde99acc98fc5653a0678f23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74566a5b7ab6bd38e95fa07b16dc23d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95b40175e1a1c358b8577e712737a3ed |
| publicationDate |
2001-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1076389-A1 |
| titleOfInvention |
Surface-emitting semiconductor laser |
| abstract |
In a surface emitting semiconductor laser device, an activenlayer and a current blocking layer arranged near the active layernare both arranged between two reflecting mirror layer structures.nThe current blocking layer is an AlInAs layer having an oxidizednregion formed at its peripheral portion. The surface emittingnsemiconductor laser device operates with a low threshold current,nand can operate continuously in a high temperature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100484490-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100482914-B1 |
| priorityDate |
1998-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |