| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2000-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3820563da124ade743fbb08ae053c401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3848155259a2fe37f616d185cc7d735f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4149d924e371982354fed77ef7e6762a |
| publicationDate |
2004-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1069213-A3 |
| titleOfInvention |
Optimal anneal technology for micro-voiding control and self-annealing management of electroplated copper |
| abstract |
The present invention generally provides for antwo step annealing process for a deposited metal layern(18). More particularly, the two step annealingnprocess provides for annealing a metal layer,npreferably electroplated copper, at less than aboutn300°C for less than about 30 seconds, followed bynannealing the layer at between about 300°C and aboutn450°C for less than about 90 seconds. The annealingnprocess occurs in a processing gas preferably with annoxygen content less than about 100 parts per millionn(ppm) and an hydrogen content less than about 4% bynvolume. The invention has the advantages of increasednsubstrate throughput rates, improved self-annealingnmicro-void control, and improved grain growthnmanagement. |
| priorityDate |
1999-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |