| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-958 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
1998-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b61cbbfebd0f206a116319ec3841228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b22a44542905014bf649b2d9a83c11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c7e88e9e5e3f0db8c9c77d9eda4f6cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f395250da28dead80c07d80cbdbe77be |
| publicationDate |
2000-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1040513-A1 |
| titleOfInvention |
High integrity borderless vias with hsq gap filled patterned conductive layers |
| abstract |
Borderless vias (55) are formed in electrical connection with a lower metal feature of a metal pattern gap filled with HSQ (52). Heat treatment in an inert atmosphere is conducted before filling the through-hole to outgas water absorbed during solvent cleaning of the through-hole, thereby reducing via void formation and improving via integrity. |
| priorityDate |
1997-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |