| abstract |
In a case where a CF film is used as an interlayer dielectricnfilm for a semiconductor device, when a wiring of W (tungsten)nis formed, the CF film is heated to a temperature of, e.g., aboutn400 to 450°C. At this time, F gases are desorbed from the CF film,nso that there are various disadvantages due to the corrosion ofnthe wiring and the decrease of film thickness. n As thin-film deposition gases, cyclic C 5 F 8 gas and anhydrocarbon gas, e.g., C 2 H 4 gas, are used. These gases arenactivated as plasm under a pressure of, e.g., 0.1 Torr, to depositna CF film on a semiconductor wafer at a process temperature ofn400°C using active species thereof. n Alternatively, cyclic C 6 F 6 gas is used as a thin-filmndeposition gas, and activated as plasma under a pressure of, e.g.,n0.06 Pa, to deposit a CF film on a semiconductor wafer at a processntemperature of 400°C using active species thereof. |