http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1034566-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
filingDate 1998-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c87e87983beb6c1c47648bec5559e33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d10ff3bddec13ea3a8e5567e564b05f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34fbbc1bfd7dd994910c27b73897a009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8193492c0af36398d5eebe58a3e07c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e40fa4dcc3397ad4446eccb3697dab8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec490c53de681161236f37b26b3dc699
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_284aef6f73aa4f118e6ab6bc6e587118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c56181e29cf1de742cb6550c2f568e7
publicationDate 2000-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1034566-A1
titleOfInvention Damage-free sculptured coating deposition
abstract We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, said method comprising the steps of: a) applying a first position of a sculptured layer with sufficiently low substrate bias that a surface onto which said sculptured layer is applied is not eroded away or contaminated in an amount which is harmful to said semiconductor device performance or longevity; and b) applying a subsequent portion of said sculptured layer with sufficiently high substrate bias to sculpture a shape from said first portion, while depositing additional layer material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces and is especially helpful when the conductive layer is copper. In the application of a barrier layer, a first portion of barrier layer material is deposited on the substrate surface using standard sputtering techniques or using an ion deposition plasma, but in combination with sufficiently low substrate bias voltage (including at no applied substrate voltage) that the surfaces impacted by ions are not sputtered in an amount which is harmful to device performance or longevity. Subsequently, a second portion of barrier material is applied using ion deposition sputtering at increased substrate bias voltage which causes resputtering (sculpturing) of the first portion of barrier layer material, while enabling a more anisotropic deposition of newly depositing material. A conductive material, and particularly a copper seed layer applied to the feature may be accomplished using the same sculpturing technique as that described above with reference to the barrier layer.
priorityDate 1997-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415877653
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419584300
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524915
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5352426
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID213013
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID638678
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978

Total number of triples: 39.