| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_827f58bacb8fef905977e1f8b3c7aace |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
1996-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f1946f619c13f436deb105884d72f25 |
| publicationDate |
2000-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1028473-A2 |
| titleOfInvention |
Trench MOS-gated device manufactured with few masks |
| abstract |
A low-voltage high-current discrete insulated-gate field-effectntransistor which is made by a very economical process with two siliconnetches. A buried poly gate gates conduction along a trench sidewall.nThe channel is provided by the residuum of an epi layer, and thensource diffusion is provided by an unmasked implant which is screenednonly by various grown oxides. |
| priorityDate |
1995-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |