http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1026726-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate | 2000-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a0800707a0bdcf1600c0d87f1853d19 |
| publicationDate | 2000-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1026726-A2 |
| titleOfInvention | Semiconductor device having an insulating film with voides and method for manufacturing the same |
| abstract | In a method of manufacturing a semiconductor device, anninterlayer insulating film (3) is formed on lower-layer wires (2)nformed on a semiconductor substrate (1), wherein an SiO 2 ninsulating layer (31) is formed, and a BPSG insulating layer (32)nis formed on the SiO 2 insulating layer (31). Thereafter, a BPSGninsulating layer (33) having higher fluidity to a heat treatmentnthan the insulating layer (32) is formed on the BPSG insulatingnlayer (32), a BPSG insulating layer (34) having the same fluiditynto a heat treatment as the insulating layer (32) is formed on thenBPSG insulating layer (33), and then the upper surface thereof isnflattened. A perforation step is carried out to form poresnpenetrating through the insulating layers (32, 33 and 34), andnthen the heat treatment is carried out to fluidize the insulatingnlayer (33) and close the pore portion in the insulating layern(33), thereby leaving the pore portion in the insulating layern(32) as voids (7). An SiO 2 insulating layer (35) is formed on theninsulating layer (34), and upper-layer wires (4) and anninsulating layer (5) are formed on the interlayer insulatingnfilm (3). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03019649-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10341544-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7033926-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10321482-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03019649-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10341544-B4 |
| priorityDate | 1999-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.