http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1022827-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2215 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2077 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4031 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-227 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 |
| filingDate | 2000-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c3119dbbef48b4d25258b7fb55db9ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20494c39c0c6ae6c3fa9de1d8663c0c0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f947fc5b13a81d14c89369fc4d51e61 |
| publicationDate | 2000-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1022827-A2 |
| titleOfInvention | Semiconductor laser device and fabrication method |
| abstract | A semiconductor photonic element is provided, whichnrealize low threshold current and satisfactory characteristicsnin the high temperatures and/or high output operating condition.nThis element is comprised of (a) a semiconductor substrate; (b)na mesa structure formed on a first surface of the substrate tonextend in a specific direction; the mesa structure including annactive layer and a pair of p- and n-type cladding layers locatednrespectively at top and bottom sides of the active layer, formingna double heterojunction; (c)a current-constricting structurenfor constricting an injection current formed at each side of thenmesa structure to expose a top of the mesa structure from thencurrent-constricting structure; the current-constrictingnstructure comprising a first current-blocking part and a secondncurrent-blocking part; the first current-blocking part having andielectric current-blocking layer that extends to the mesanstructure; the dielectric current-blocking layer being contactednwith top edges of the mesa structure; the second current-blockingnpart having a semiconductor current-blocking layer; and (d) ansemiconductor burying layer formed to cover the mesa structurenand the multilayer current-constricting structure; thensemiconductor burying layer being contacted with the top of thenmesa structure. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1339108-A1 |
| priorityDate | 1999-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.