Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-915 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1078 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
filingDate |
1996-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a59e24faecac5aa564c612be61a0a694 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4154ccce6e20c79eaffe76b4978b1f01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d059b90885fb19727e9cf5953ed6f230 |
publicationDate |
2000-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1008172-A1 |
titleOfInvention |
Improved interface between titanium and aluminum-alloy in metal stack for integrated circuit |
abstract |
An improvement in a metal stack used for interconnecting structures in an integrated circuit. The improvement comprises the entrapping in a titanium layer of nitrogen at the interface where the titanium layer contacts a bulk conductor layer such as an aluminum-copper alloy layer. The entrapped nitrogen prevents the formation of any substantial amount of titanium aluminide thereby reducing current densities and also improving the electromigration properties of the stack. As currently preferred, the nitrogen is entrapped in approximately the first 30 Å of the titanium layer. |
priorityDate |
1995-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |