http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0982765-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06f6859e19dacec5a834168e491504b2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S134-902 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1999-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25510b94c8bcd34f8879528887bdd4ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b26febd80c8ee5941ddcd291dd3bf64 |
| publicationDate | 2000-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0982765-A2 |
| titleOfInvention | Cleaning method of semiconductor substrate |
| abstract | A cleaning method of a semiconductor substratenincludes steps of: immersing the semiconductor substratensuch as into a mixed solution prepared by mixing hydrogennperoxide and ammonium hydroxide; immersing the substratenimmersed in the mixed solution, into an oxidative solutionnincluding at least one of ozone dissolved aqueous solution,nnitric acid solution or hydrogen peroxide solution;nimmersing the substrate immersed in the oxidative solution,ninto a mixed solution of hydrofluoric acid with an organicnacid or with salt of the organic acid; immersing thensubstrate immersed in the mixed solution, into a solutionnincluding an organic acid or salt of the organic acid, orninto a mixed solution of hydrofluoric acid with an organicnacid or salt of the organic acid; and immersing thensubstrate immersed in the solution including the organicnacid or salt of the organic acid, or immersed in the mixednsolution of hydrofluoric acid with the organic acid or saltnof the organic acid, into an oxidative solution of at leastnone of ozone dissolved aqueous solution, nitric acidnsolution and hydrogen peroxide solution. According to thencleaning method, there are removed fine damages caused bynworking of the semiconductor substrate, and organicnsubstances, metal impurities and particles adhered onto thensurface of substrate, with a decreased number of steps. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6146467-A |
| priorityDate | 1998-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 81.