| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-92 |
| filingDate |
1999-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce542b602b2b1a856e3b70aea5f79eac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8faf4116941b5fc4bcb8549e8724a13a |
| publicationDate |
2000-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0977257-A2 |
| titleOfInvention |
Stacked capacitor DRAM cell and method of producing the same |
| abstract |
A plugged crown memory cell is disclosed. In one embodiment,na plugged crown memory cell includes a storage node plug (crownncell plug) and subsequent formed polysilicon cylinder or similarnthree dimensional structure. n In another embodiment, a method for manufacturing anplugged crown memory cell in accordance with the invention mayninclude the following steps: (1) formation of storage node contactn(memory cell plug); (2) formation of memory cell sidewall; and (3)netch back of crown poly and removal of core oxide (PSG) to formnisolated and electrically separate memory cell. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6667228-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03088718-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7157330-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6917111-B2 |
| priorityDate |
1998-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |