| abstract |
There is disclosed a method for producing a siliconnsingle crystal in accordance with the Czochralski methodncharacterized in that a crystal is pulled with controllingna temperature in a furnace so that ΔG may be 0 or annegative value, where ΔG is a difference between thentemperature gradient Gc (°C/mm) at the center of a crystalnand the temperature gradient Ge (°C/mm) at thencircumferential portion of the crystal, namely ΔG =(Ge-Gc),nwherein G is a temperature gradient in the vicinity of ansolid-liquid interface of a crystal from the melting pointnof silicon to 1400°C, and with controlling a pulling ratenin a range between a pulling rate corresponding to anminimum value of the inner line of OSF region and a pullingnrate corresponding to a minimum value of the outer line,nwhen OSF region is generated in an inverted M belt shape inna defect distribution chart which shows a defectndistribution in which the horizontal axis represents andiameter of the crystal and the vertical axis represent anpulling rate. There can be provided a method of producingna silicon single crystal wafer by CZ method characterizednin that OSF in the ring shape distribution generated whennbeing subjected to thermal oxidation or latent nuclei ofnOSF is present in a low density, and neither FPD, COP, L/D,nLSTD nor defect detected by Cu decoration is present underna stable manufacture condition. |