| abstract |
A semiconductor device includes a substrate (211),nan insulation film (215, 218, 222, 223) formed aboventhe substrate (211) and containing silicon-fluorinenbonds, and a titanium-based metal wiring layer (213,n217, 220) formed on the insulation film (215, 218, 222,n223), the titanium-based metal wiring layer (213, 217,n220) containing fluorine which is diffused from theninsulation film (215, 218, 222, 223) and has a fluorinenconcentration of less than 1 × 10 20 atoms/cm 3 . |