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filingDate 1998-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b309a94c39a8c09b540b2828bf53e632
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publicationDate 2000-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0939433-A3
titleOfInvention Method for reforming undercoating surface and method for production of semiconductor device
abstract This invention is directed to a method fornreforming an undercoating surface prior to the formation ofna prospective film by the CVD technique using a reactionngas containing an ozone-containing gas having ozonencontained in oxygen and TEOS. It effects the reform of thensurface by forming an undercoating insulating film 5 on ansubstrate prior to the formation of film and exposing thensurface of the undercoating insulating film 5 to plasmangas.
priorityDate 1998-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.