http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0930643-A2

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filingDate 1999-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71302db62bf79571eb9534084cab8542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9751d96170d1151a927c12f970f2b50
publicationDate 1999-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0930643-A2
titleOfInvention Method for formation of a doped region in a semiconductor substrate and apparatus therefor
abstract The invention relates to a formation method of impuritynregion in a semiconductor layer for introducing a dopant impurity asna donor or an acceptor. The formation method comprises the steps of;nmixing a impurity gas with a gas containing any one of H 2 and anninert gas, electrically discharging the mixed gas, diffusingnimpurities adhered to the surface of a semiconductor layer 12 to thensemiconductor layer 12, by introducing the discharged impurity gasnto the surface of the semiconductor layer, at the same time, bynaccelerating ions of the gas containing any one of the H 2 and inertngases to irradiate the surface of the semiconductor layer, and bynraising temperature of the surface of the semiconductor layer, andnactivating electrically the same.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006002138-A2
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priorityDate 1998-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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