| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43ee55d23b83ae77d3b990af9481585e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-977
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-956 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B28B1-30 |
| filingDate |
1998-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2c77f3fc4f8d7a7c233190c0c8fcab3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8276795268c3c6dfcb503b2aed4543c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43d04972ec833c4db13bf84b3e4966c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_267b6da9c516b5f848537ce99e5c1fec |
| publicationDate |
1999-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0899358-A2 |
| titleOfInvention |
Silicon carbide fabrication |
| abstract |
An SiC fabrication comprising a CVD-SiC fabrication excellent in strength and thermal characteristics. The SiC fabrication is prepared with a CVD process (i.e. CVD-SiC fabrication) which has a thermal conductivity along the direction of the SiC crystal growth between 100 and 300 W/m.K, and an average grain diameter of the internal structure between 4 to 12 mu m. It is preferred that the ratio of the thermal conductivity along the direction of the SiC crystal growth to the thermal conductivity in the perpendicular direction is in a range of 1.10 to 1.40. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11658060-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111620704-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111620704-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005097693-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112830786-A |
| priorityDate |
1997-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |