| abstract |
A surface-emitting semiconductor device isnfabricated by a method comprising the steps ofnepitaxially growing, on a first substrate comprising ansemiconductor, semiconductor layers having ansemiconductor active layer capable of emitting lightnupon feed of an electric current; forming an electrodenfor feeding electric current to the semiconductornactive layer; bonding the first substrate on which thensemiconductor layers have been formed, to a secondnsubstrate with the former's semiconductor layer sideninward; and removing the first substrate from thenbonded substrates so as to leave the semiconductornlayers on the second substrate. |