http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0896369-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14ba71eccbb5f65a22b78f39b3c6ffc3
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
filingDate 1997-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_983ac3ba903f7b5d6a017e24b5b7c7c0
publicationDate 1999-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0896369-A1
titleOfInvention Process for realizing cross-point memory devices with cells having a source channel which is self-aligned to the bit line and to the field oxide
abstract The invention relates to a process of manufacturing cross-point matrix memory devices which have floating gate memory cells having the source channel self-aligned to the bit line and the field oxide. The process comprises the steps of: growing a thin layer (3) of tunnel oxide on the matrix region; depositing a stack structure comprising a first conductive layer (4), an intermediate dielectric layer (5), and a second conductive layer (6); photolithographing with a Poly1 mask to define a plurality of parallel floating gate regions (13) in said stack structure; self-aligned etching of said stack structure (4,5,6), above the active areas, to define continuous bit lines; implanting, to confer predetermined conductivity on the active areas (10). Advantageously, the self-aligned cascade etching step for removing parallel strips from multiple layers, down to the active areas of the substrate (1), is discontinued before the field oxide (2) is removed, and the implantation step is carried out in the presence of field oxide (2) over the source active areas (10). <IMAGE>
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0975066-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0975066-A2
priorityDate 1997-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4113325-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID190217
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559572

Total number of triples: 16.