| abstract |
A semiconductor substrate adapted to giga-scalenintegration (GSI) comprises a support, at least thensurface of which is made of semiconductor, annelectroconductive material layer, an insulating layernand a semiconductor layer arranged sequentially in thenabove order. The electroconductive material layer hasnat least in part thereof an electroconductive reactednlayer obtained by causing two metals, a metal and ansemiconductor, a metal and a metal-semiconductorncompound, a semiconductor and a metal-semiconductorncompound, or two metal-semiconductor compounds to reactneach other. An electroconductive reaction terminatingnlayer that is made of a material that does not reactnwith the reacted layer is arranged between the reactednlayer and the insulating layer or the support. |