| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc05229904be2987713acc8b41db7cd3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-46 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate |
1997-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f70b08b5a8a5e056acf0ae4a8a052cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9642f9d8f9fdf8da34bc80fdebdb1408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32eef90db69c65cedc54d843c1c655c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cd3f7173c96ea99c71a0f3d7756b8e5 |
| publicationDate |
1998-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0885410-A1 |
| titleOfInvention |
Thermal treatment process of positive photoresist composition |
| abstract |
A flash post exposure bake (Flash PEB) process for a diazonaphthoquinone sulfonate ester-novolak positive photoresist is described which offers significant advantages. This process uses a higher than conventional post exposure baking (PEB) temperature (≥130 °C) and a very short baking time (≤ 30 seconds) of the resist, preferentially over a bottom antireflective coating. It significantly improves the photoresist's resolution, process latitude, thermal deformation temperature, resist adhesion and plasma etch resistance. |
| priorityDate |
1996-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |