http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0866372-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-20 |
| filingDate | 1998-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cd910a07ba0e1c5ac2f2583761ed44c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_924db015e5585590e7ce6b44ab10b240 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f5f73f6b034f9025ff86a2706972c90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41366e7aa463080b911c68b5be2ca445 |
| publicationDate | 1998-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0866372-A1 |
| titleOfInvention | Membrane mask for short wavelength radiaton exposure process |
| abstract | There are membrane masks for electron beam exposure processesndescribed the high mechanical stabilitynand have no tension at low membrane thicknessnand their submicron structures with no rounding effectsnreactive ion etching processes are easy to manufacture.n n n In the case of a membrane mask for structuring surface areas with the aid of electron or corpuscular beams, a layer 1 of silicon nitride with through openings which define the mask pattern is applied to a surface of a semiconductor wafer 2, which preferably consists of silicon. A trough-shaped depression 3 extends from the other surface of the semiconductor die 2 to the layer-bearing surface. Another mask for structuring surface areas with the aid of electron beams has at least one continuous layer 30 and one layer 31 defining the mask pattern. These two layers are applied to the surface of a semiconductor wafer 32 with a trough-shaped recess 33.n n n The anisotropic plasma etching method according to the invention makes it possible to transfer lithographically generated patterns into the membrane without the otherwise usual rounding of edges. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6638666-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19945170-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6210842-B1 |
| priorityDate | 1997-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.