| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 |
| filingDate |
1996-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b61cbbfebd0f206a116319ec3841228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f01b89a691ebded8017f297a882081fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b22a44542905014bf649b2d9a83c11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f395250da28dead80c07d80cbdbe77be |
| publicationDate |
1998-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0860880-A2 |
| titleOfInvention |
Semiconductor device having improved interconnection pattern and method of manufacturing same |
| abstract |
A semiconductor device is described having an interconnection pattern comprising andielectric layer (21) bonded to a metal layer (22) through an intermediate bondingnlayer (23) formed by reaction of an adhesion promoter with the metal. The dielectricnlayer comprises a material selected from the group consisting of teflons, parylenes andnsilesquioxanes. By employing a low resistivity metal, such as copper and a lowndielectric constant material a low RC delay interconnection pattern can be formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6864170-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10059935-A1 |
| priorityDate |
1995-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |