http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0855621-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0751 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-70991 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 1998-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0855621-A3 |
| titleOfInvention | Manufacturing method and apparatus for semiconductor device |
| abstract | In a clean room, after conducting a surface treatment onnthe surface of a semiconductor substrate with 4-trimethylsiloxy-3-penten-2-one,nthe treated surface of thensemiconductor substrate is coated with a chemically amplifiednresist, thereby forming a first resist film. Then, the firstnresist film is successively subjected to exposure, PEB andndevelopment, thereby forming a first resist pattern of thenchemically amplified resist. Next, in the same clean room,nafter conducting a surface treatment on the surface of thensemiconductor substrate with 4-dimethyl-n-hexylsiloxy-3-penten-2-one,nthe treated surface of the semiconductor substrate isncoated with a non-chemically amplified resist, thereby formingna second resist film. Then, the second resist film isnsuccessively subjected to the exposure, the PEB and thendevelopment, thereby forming a second resist pattern of thennon-chemically amplified resist. |
| priorityDate | 1997-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.