| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13454 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
1997-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b33b78dc568f054092588db94cb1859
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9132d8dc9a3707a45dbec72502ab773 |
| publicationDate |
2004-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0844670-B1 |
| titleOfInvention |
Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method |
| abstract |
A method for manufacturing a highly reliable non-single crystal silicon thin film transistor. A polycrystalline silicon layer (17) is formed on a base SiO2 film (15) after the film (15) is formed on a glass substrate (14). Then the layer (17) is patterned and a gate SiO2 film (18) is formed by ECR-PECVD or TEOS-PECVD. After forming the film (18), a gate electrode (19) is formed and source and drain regions (20) and (20) are formed by ion-doping. Then, after an SiO2 interlayer insulating film (21) is formed and a contact hole (22) is opened, an electrode (23) composed of an Al-Si-Cu film is formed. Lastly, wet-annealing is conducted for three hours at a temperature of 350 °C. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570626-B2 |
| priorityDate |
1996-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |