| abstract |
An electron emitting device which efficiently emits electrons by supplying electrons to a p-type diamond layer (13) from an electron supplying layer (12) by impressing a forward bias upon MIS, p-n, and pin structures using diamond layers. In the production process of the electron emitting device, a continuous diamond layer (13) is formed by a vapor synthesizing method and the thickness of the diamond layer is adjusted to a prescribed value by etching. In order to arbitrarily control the electron affinity of the surface of the diamond layer (13), the surface is exposed to vacuum ultraviolet rays, or hydrogen or oxygen plasma. |