| abstract |
A doping sequence that reduces the cost and complexity of forming source/drain regions (11, 12) in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass (21), silicide contact structures (18, 19), and interference effects created by thin dielectric layers to produce source and drain junctions (23, 24) that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. |