| abstract |
A high temperature metallization system for use with ansemiconductor device (23). The semiconductor device (23)nhas a multi-layer metallization system (36). An adhesionnlayer (37) of the metallization system (36) is formed on ansemiconductor substrate (20). A barrier layer (38) thatncontains a nickel alloy is formed on the adhesion layern(37). A protective layer (39) is formed on the barriernlayer (38). The barrier layer (38) inhibits solderncomponents from diffusing toward the semiconductornsubstrate (20) during high temperature processing. |