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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b61cbbfebd0f206a116319ec3841228
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publicationDate 1997-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0811246-A1
titleOfInvention Tunneling technology for reducing intra-conductive layer capacitance
abstract The control speed of semiconductor circuitry is increased by forming air tunnels (41) in the interwiring spaces (2) of a conductive pattern (1) to reduce intraconductive layer capacitance.
priorityDate 1995-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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