| abstract |
This is a method of forming a via 39 and a conductor 52 on dielectric layer 40 (which dielectric layer 40 is on an electronic microcircuit substrate 10 which via 39 is electrically connected to a conductive area on the surface of the substrate 10) and a structure formed thereby. The method generally comprises: forming the dielectric layer 30 over the substrate 10; forming a via opening through the insulating layer to expose at least a portion of the conductive area; selectively depositing via metal 39 in the via opening to partially fill the via opening; depositing conductor metal 52 over the dielectric 30 and the selectively deposited via metal 39; and patterning the conductor metal. Generally the via metal and the conductor metal consist essentially of aluminum, copper or combinations thereof. A seed layer 50 (selective deposition initiator) may be used, selected from the group consisting of tungsten, titanium, paladium, platinum, copper, aluminum, and combinations thereof. The conductor metal may be doped with the selectively deposited via metal being doped by dopant diffusion from the conductor metal, thereby avoiding the difficulty of depositing a doped selective metal. |