| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1064 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-473
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-227 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-473
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 |
| filingDate |
1997-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a1bae5e34d298b62db81d01a6d1a263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d0a0308af425a0b0083dd5f95e154f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7ce9de4e84fe3540ee0cb1a6cb09df6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e5cb34fdbc458468aa940314d508226 |
| publicationDate |
1997-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0793266-A2 |
| titleOfInvention |
Method for etching a compound semiconductor, a semi-conductor laser device and method for producing the same |
| abstract |
An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10 10 cm -3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogen. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas) ≥ 1 ; and an internal pressure during etching reaction is about 1 mTorr or greater. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023131742-A1 |
| priorityDate |
1996-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |