| abstract |
A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films (11,13), an active layer (15), and third and fourth semiconductor multi-layered films (12,14) which are piled up on a GaAs substrate (16) in that order. Furthermore, the first film (11) is formed by piling up Al x-1 Ga 1-x1 As layers (0 ≤ x1 ≤ 1) and A1 x2 Ga 1-x2 As layers (0 ≤ x2 ≤ 1) one after the other by turns. The second film (13) is formed by piling up In x3 Ga 1-x3 As y3 P 1-y3 layers (0 ≤ x3, y3 ≤ 1) and In x4 Ga 1-x4 As y4 P 1-y4 layers (0 ≤ x4, y4 ≤ 1) one after the other by turns. The active layer (15) is provided as an In x5 Ga 1-x5 As y5 P 1-y5 layer (0 ≤ x5, y5 ≤ 1). The third film (14) is formed by piling up In x6 Ga 1- x6 As y6 P 1-y6 layers (0 ≤ x6, y6 ≤ 1) and In x7 Ga 1- x7 As y7 P 1-y7 layers (0 ≤ x7, y7 ≤ 1) one after the other by turns. The fourth film (12) is formed by piling up Al x8 Ga 1-x8 As layers (0 ≤ x8 ≤ 1) and Al x9 Ga 1-x9 As layers (0 ≤x9 ≤1) one after the other by turns. In each film, each layer has a thickness corresponding to a value obtained by dividing an emission wavelength by a refractive index and 4. |