http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0784341-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b03ab870219ca27dde0f7c0b621aecd8 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4922 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3733 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-492 |
filingDate | 1995-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_455e558b17fe4b5d601ff38678493243 |
publicationDate | 1997-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-0784341-A1 |
titleOfInvention | Method of manufacture of material for semiconductor substrate, material for semiconductor substrate, and package for semiconductor |
abstract | A material for semiconductor substrate is composed substantially of tungsten and/or molybdenum mixed with 5-30 wt.% copper, 0.002-0.07 wt.% phosphorus, 0.1-0.5 wt.% one or two kinds selected from among cobalt, nickel, and iron. The material is manufactured by mixing together tungsten powder and/or molybdenum powder of 1 µm in particle size, copper powder of 7 µm in particle size, and small amounts of an iron-group metal and phosphorus or phosphorus compound, molding the mixture at a pressure of 1.0 ton/cm 2 , and then, sintering the molded body at a temperature which allows solid and liquid to coexist below the melting point of copper. |
priorityDate | 1995-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.