| abstract |
This invention provides a stable process for depositing an antireflectivenlayer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide,nsilane oxynitride, and silane nitride processes. Helium is also used to stabilize thenprocess, so that different films can be deposited. The invention also provides conditionsnunder which process parameters can be controlled to produce antireflective layers withnvarying optimum refractive index, absorptive index, and thickness for obtaining thendesired optical behavior. |