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filingDate 1995-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79023b5f57aa1e30cef0e7801388eb3b
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publicationDate 1997-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0776052-A1
titleOfInvention Organic light emitting diode using p-n junction
abstract An organic light-emitting diode with high luminance and high efficiency comprising an anode, an organic pn-junction and a cathode layered sequentially in this order, wherein the organic pn-junction emits light by an electric current passing through the diode in an electric field applied between the anode and the cathode, characterized in that the organic pn-junction is composed of an organic p-type luminescent-semiconductor thin film and an organic n-type luminescent-semiconductor thin film, wherein one surface of the organic p-type luminescent-semiconductor thin film is in contact with the anode and another surface of the organic p-type luminescent-semiconductor thin film is in contact with the organic n-type luminescent-semiconductor thin film, and one surface of the organic n-type luminescent-semiconductor thin film is in contact with the cathode and another surface of the organic n-type luminescent-semiconductor thin film is in contact with the organic p-type luminescent-semiconductor thin film and wherein the diode satisfies all the conditions of the following equations 1 to 3: Equation 1 X1 ≦ X2 Equation 2 IP1 ≦ IP2 Equation 3 -0.2eV ≦ (IP2 - IP1) - (X2 - X1) ≦ 0.2eV in which X1 denotes an absolute value of the electron affinity of the organic p-type luminescent-semiconductor, X2 denotes an absolute value of the electron affinity of the organic n-luminescent-semiconductor, IP1 denotes an ionization potential of the organic p-type luminescent-semiconductor and IP2 denotes an ionization potential of the organic n-type luminescent-semiconductor.
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priorityDate 1994-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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