http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0768707-A2

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1004
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08
filingDate 1996-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_316561c9cfe9bbb1e30f1985f3ee0ebd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fbbb7c1d5e1279f5b18ad0e85afd018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5f82c7ea851b6f60ddee077c18f0f22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17bd2447d25464c066fb007fff41fdf9
publicationDate 1997-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0768707-A2
titleOfInvention Molecular beam epitaxy process with growing layer thickness control
abstract Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
priorityDate 1995-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5091320-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4332833-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5399521-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5313044-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5171399-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448893595
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359596
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6547
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31170
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID76871762
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419586572
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522218
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID89859
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414859283
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557764

Total number of triples: 45.