http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0767493-A2

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
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filingDate 1996-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_331826059baa65854c87491fb19590d5
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publicationDate 1997-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0767493-A2
titleOfInvention Isolation for electrical connection of stacked integrated semiconductor device structures
abstract An improved method for isolating electrical conductors which are positioned over each other is disclosed. These conductors would normally contact each other because of the somewhat imprecise patterning and etching steps used to fabricate a multitude of conductive elements, e.g., in a very dense semiconductor structure. The method involves forming a recess in the upper surface of the lower conductor, and then at least partially filling the recess with an oxide-type material. This method is particularly valuable in the construction of stacked capacitor cells. Cells prepared using this technique also form part of this invention.
priorityDate 1995-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 22.