Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-31 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
filingDate |
1996-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_331826059baa65854c87491fb19590d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d8f46ed55278fb4b5e1e5edbac00960 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b038de018967836215db05d7c5c77147 |
publicationDate |
1997-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-0767493-A2 |
titleOfInvention |
Isolation for electrical connection of stacked integrated semiconductor device structures |
abstract |
An improved method for isolating electrical conductors which are positioned over each other is disclosed. These conductors would normally contact each other because of the somewhat imprecise patterning and etching steps used to fabricate a multitude of conductive elements, e.g., in a very dense semiconductor structure. The method involves forming a recess in the upper surface of the lower conductor, and then at least partially filling the recess with an oxide-type material. This method is particularly valuable in the construction of stacked capacitor cells. Cells prepared using this technique also form part of this invention. |
priorityDate |
1995-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |