| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9362ef404872f84cfbb078702db3aee4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate |
1996-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ae53a28bc77892248ec82d5490a37c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9927093da3dda4e898aa00a0fd0ebff8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98ef2b3110fc5971dcb28d97b9e864cd |
| publicationDate |
1999-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0757884-A4 |
| titleOfInvention |
METHOD FOR PRODUCING FLUORINATED SILICONE OXIDE LAYERS USING PLASMA CVD |
| abstract |
A method of forming a fluorinated silicon oxide dielectric layer (33) by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber (10) and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by the plasma and react proximate a substrate (16) to form a fluorinated silicon oxide layer on the surface of the substrate (16). The fluorinated layer so formed has a dielectric constant which is less than that of a silicon oxide layer. |
| priorityDate |
1995-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |