| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_481648b910607c5dcbe4ba1c7a2b84a8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate |
1996-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5dd7b70289121b49ec98f27ad1c51864 |
| publicationDate |
1996-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0743675-A1 |
| titleOfInvention |
Isolation process by deposition of viscous oxide in narrow cavities and semiconductor device |
| abstract |
(a) on dépose sur les régions prédéterminées du substrat à isoler au moins une couche d'oxyde isolant dit conforme; (b) on dépose sur les régions prédéterminées, par réaction chimique en phase plasma de tétraalkosilicate et de péroxyde d'hydrogène, une couche de précurseur d'oxyde aplanissant; (c) on dépose sur les régions prédéterminées au moins une couche d'oxyde isolant; et (d) on effectue un recuit de transformation. The invention relates to a method of electrically isolating conductive or semiconductor materials from a substrate, characterized in that it comprises at least the following steps: (a) at least one so-called conforming insulating oxide layer is deposited on the predetermined regions of the substrate to be insulated; (b) a layer of planarizing oxide precursor is deposited on the predetermined regions, by chemical reaction in the plasma phase of tetraalkosilicate and hydrogen peroxide; (c) at least one layer of insulating oxide is deposited on the predetermined regions; and (d) a transformation annealing is carried out. n n n It also relates to semiconductor devices and elements of integrated circuits with narrow isolated cavities. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6660656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6858153-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6660663-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6730593-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6713390-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6784119-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7651725-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6926926-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5858880-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2376130-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6242366-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6541282-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7227244-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6562690-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6596655-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02058132-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6709721-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6054379-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6303523-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6667553-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6537929-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6413583-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6800571-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6593655-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6348725-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6287990-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6593247-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6399489-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6287989-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2376130-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6511903-B1 |
| priorityDate |
1995-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |