| abstract |
A method for fabricating a semiconductor device includes a step of depositing a first compound semiconductor layer (14, 25) by a MOVPE process to have a first conductivity type, doping a surface of the first compound semiconductor layer (15, 26) to the same, first conductivity type, by implementing a planar doping process as a result of decomposition of a gaseous dopant, such that no substantial growth of the first compound semiconductor layer occurs during the planar doping process, and depositing a second compound semiconductor layer (16, 27) of the first conductivity type on the doped surface of the first compound semiconductor layer by a MOVPE process. |