| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-908 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
1996-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7318bd2b0207236e52086acf1085cdec |
| publicationDate |
1996-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0740336-A2 |
| titleOfInvention |
Method for fabricating semiconductor device having buried contact structure |
| abstract |
A method of forming a tungsten plug is disclosed in which a blanket tungsten layer 16 is deposited on a conductive layer including a titanium nitride film 15 and thereafter etched back by using SF 6 plasma until the surface of the titanium nitride (TiN) film 15 is exposed. At this time, fluorine in SF 6 adheres to the surface of the TiN film. The wafer thus treated is kept into a vacuum atmosphere and then a removing step is performed to remove fluorine from the surface of the TiN film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0897193-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0897193-A3 |
| priorityDate |
1995-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |