| abstract |
A manganese-based composite oxide single crystal of the chemical composition (LaxSr 1-x ) y + 1 Mn y 0 3y+1 , in which the subscript x is a number in the range from 0.3 to 0.5 and the subscript y is a number substantially equal to 1 or 2, having, differing from a conventional perovskite structure, a single-layered or double-layered laminar structure, respectively, exhibits a very unique magnetic resistance behavior so that it is promising as an element in a memory switching magnetic resistance device. The single crystals can be prepared from the oxides of respective elements by reacting and sintering a powder blend of an exact blending proportion into a sintered body which is subjected to the process of single crystal growing by the method of floating zone melting. |