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filingDate 1995-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f7dbb4ecbd54f2c4c606125c7b2f9f4
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publicationDate 1996-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0711846-A1
titleOfInvention Titanium nitride deposited by chemical vapor deposition
abstract Properties of films deposited by chemical vapor deposition onto a substrate can be modified by treating them in a plasma of a gas while applying a bias voltage to the substrate. In the case of titanium nitride, the density of the films are increased and the sheet resistivity decreased and stabilized.
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