| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B35-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-02 |
| filingDate |
1995-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7f136a5bc14412be9faee53cc7f5720
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b182fedc8a0afc36bf6c364995b9c20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d33d8be38d98812e11d5e7baf0b2d3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28ae0f1c7a817124b57dfbcd41fdf81c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69f11353ba782935af961d20efd3bd7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f8a67370a17edda843e00268b7e5f37 |
| publicationDate |
1996-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0690152-A2 |
| titleOfInvention |
Process and apparatus for the production of films of oxide type single crystal |
| abstract |
A film of an oxide type single crystal, such as lithium niobate, on a substrate of such an oxide type single crystal is epitaxially grown on the substrate by contacting the substrate with a melt in an overcooled state. To improve productivity and reduce cracking of the substrate while increasing crystallinity of the film, the substrate of the oxide type single crystal is contacted with the melt (12) held in a first furnace (21), and the substrate of the oxide type single crystal is held inside a second furnace (24) separated from said first furnace before or after contact with the melt. The temperature of the substrate is adjusted by the substrate in the second furnace. |
| priorityDate |
1994-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |